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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM2313PT CURRENT 3.6 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 1.7~2.1 (2) (3) SC-59/SOT-346 0.95 2.7~3.1 0.95 (1) CONSTRUCTION * P-Channel Enhancement 0.3~0.51 1.2~1.9 0.89~1.3 0.085~0.2 0.3~0.6 2.1~2.95 1G 2S CIRCUIT 3 D 0~0.1 Dimensions in millimeters SC-59/SOT-346 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM2313PT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous -30 V V 20 -3.6 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 14.4 1250 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 C/W 2006-02 RATING CHARACTERISTIC CURVES ( CHM2313PT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = -250 A VDS = -30 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V -30 -1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID =-250 A VGS=-10V, ID=-3.6A VGS=-4.5V, ID=-2.0A -1 50 75 4 -3 60 V m 90 S Forward Transconductance VDS =-15V, ID = -3.6A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=-15V, ID=-10A VGS=-10V V DD= -15V ID = -1.0A , VGS = -10 V RGEN= 6 17 3 3.5 10 6 46 23 21 nC 20 12 90 45 nS ton DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) (Note 2) -1.7 -1.2 A V Drain-Source Diode Forward Voltage IS = -1.7A , VGS = 0 V RATING CHARACTERISTIC CURVES ( CHM2313PT ) Typical Electrical Characteristics Figure 1. Output Characteristics 50 10 Figure 2. Transfer Characteristics -VG S =1 0 V 8V 6V 8 -ID , DRAIN CURRENT (A) -I D , DRAIN CURRENT (A) 40 -VG S =5 V 30 TJ=25C 6 -VG S =4 V 20 4 10 -VG S =3 V 0 2.0 8.0 4.0 6.0 -V DS , DRAIN-TO-SOURCE VOLTAGE (V) 10 2 TJ=125C 0 0 0 TJ=-55C 3.0 2.0 1.0 -VGS , GATE-TO-SOURCE VOLTAGE (V) Figure 3. Gate Charge 10 2.2 VDS=10V ID=4.2A 8 Figure 4. On-Resistance Variation with Temperature VGS=-10V ID=-3.6A 1.9 -VGS , GATE TO SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE R DS(on) , NO RMALIZED 1.6 6 1.3 4 1.0 2 0.7 0 0 5 10 Qg , TOTAL GATE CHARGE (nC) 15 20 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (C) 150 200 Figure 5. Gate Threshold Variation with Temperature 1.3 1.2 VDS=VGS ID=250uA Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C) 125 150 |
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